The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated.
| Published in | Advances in Materials (Volume 9, Issue 4) |
| DOI | 10.11648/j.am.20200904.13 |
| Page(s) | 94-101 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2020. Published by Science Publishing Group |
ZnO, ZnO:Ga, Fast Luminescence, Decay kinetics, Radioluminescence, Scintillator
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APA Style
Donats Millers, Larisa Grigorjeva, Aleksejs Zolotarjovs, Faina Muktepavela, Jurgis Grube, et al. (2020). ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Advances in Materials, 9(4), 94-101. https://doi.org/10.11648/j.am.20200904.13
ACS Style
Donats Millers; Larisa Grigorjeva; Aleksejs Zolotarjovs; Faina Muktepavela; Jurgis Grube, et al. ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Adv. Mater. 2020, 9(4), 94-101. doi: 10.11648/j.am.20200904.13
AMA Style
Donats Millers, Larisa Grigorjeva, Aleksejs Zolotarjovs, Faina Muktepavela, Jurgis Grube, et al. ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Adv Mater. 2020;9(4):94-101. doi: 10.11648/j.am.20200904.13
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Download@article{10.11648/j.am.20200904.13,
author = {Donats Millers and Larisa Grigorjeva and Aleksejs Zolotarjovs and Faina Muktepavela and Jurgis Grube and Agnese Spustaka and Piotr Rodnyi and Ivan Venevtsev and Elena Gorokhova},
title = {ZnO and ZnO:Ga Ceramics for Advanced Scintillators},
journal = {Advances in Materials},
volume = {9},
number = {4},
pages = {94-101},
doi = {10.11648/j.am.20200904.13},
url = {https://doi.org/10.11648/j.am.20200904.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20200904.13},
abstract = {The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated.},
year = {2020}
}
TY - JOUR T1 - ZnO and ZnO:Ga Ceramics for Advanced Scintillators AU - Donats Millers AU - Larisa Grigorjeva AU - Aleksejs Zolotarjovs AU - Faina Muktepavela AU - Jurgis Grube AU - Agnese Spustaka AU - Piotr Rodnyi AU - Ivan Venevtsev AU - Elena Gorokhova Y1 - 2020/12/22 PY - 2020 N1 - https://doi.org/10.11648/j.am.20200904.13 DO - 10.11648/j.am.20200904.13 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 94 EP - 101 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20200904.13 AB - The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated. VL - 9 IS - 4 ER -
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